Temperature Dependency of MOSFET Device Characteristics in 4H- and 6H-Silicon Carbide (SiC)
نویسندگان
چکیده
An analytical model for lateral MOSFET that includes the effects of temperature variation in 4Hand 6H-SiC poly-type is presented in this paper. SiC shows a tremendous potential for high temperature electronics applications [1-4]. The model includes the effects of temperature variation on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact region resistances. The model is validated for 6H-SiC by comparing simulation results with previously measured experimental data reported in [5]. MOSFET device behavior in 4H-SiC is also simulated and compared with 6H-SiC material system.
منابع مشابه
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